Fabrication and characterization of room temperature silicon single electron memory
نویسندگان
چکیده
A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ;10 nm and a nanoscale floating gate of dimension ;~7 nm 3 7 nm 3 2 nm!, patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate. © 1997 American Vacuum Society. @S0734-211X~97!04906-8#
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تاریخ انتشار 1997